Plot I D versus V GS for an n-channel MOSFET with W = 1 µm, L = 1 µm, k = 54 µA/V 2 ,

Plot ˆšI_Dversus V_GSfor an n-channel MOSFET with W = 1 µm, L = 1 µm, k€™ = 54 µA/V², λ = 0, V_DS= 5 V, V_SB= 0, V_t0= 0.7 V, and „°_c= 1.5 × 10⁶V/m. Ignore sub threshold conduction. Compare the plot with Fig. 1.44a and explain the main difference for large V_GS.

Fig. 1.44(a)

(HA)1/2 20 15 10 Vps = 5 V W = 20 m L= 20 m 5 VGs (V) 4 Extrapolated V, = 0.7 V LO