An article in the IEEE Transactions on Electron Devices (Nov. 1986, pp. 1754) describes a study on polysilicon doping. The experiment shown below is a variation of their study. The response variable is base current.

(a) Is there evidence (with α = 0.05) indicating that either polysilicon doping level or anneal temperature affect base current?

(b) Prepare graphical displays to assist in interpretation of this experiment.

(c) Analyze the residuals and comment on model adequacy.

(d) Is the model 

 

supported by this experiment (x₁ = doping level, x₂ = temperature)? Estimate the parameters in this model and plot the response surface.

Transcribed Image Text:

Anneal Temperature (°C) Polysilicon Doping (ions) 900 950 1000 4.60 10.15 11.01 1 x 1020 4.40 10.20 10.58 3.20 9.38 10.81 2 x 1020 3.50 10.02 10.60