a. Determine V _DS for V _GS = 0 _V and I_D = 6 mA using the characteristics of Fig. 6.11 .

Fig. 6.11

b. Using the results of part (a), calculate the resistance of the JFET for the region I_D = 0 to 6 mA for V GS = 0 _V.
c. Determine V _DS for V_GS = -1 V and I_D = 3 mA.
d. Using the results of part (c), calculate the resistance of the JFET for the region I_D = 0 to 3 mA for V_GS = -1 V.
e. Determine V _DS for V_GS = -2_V and I_D = 1.5 mA.
f. Using the results of part (e), calculate the resistance of the JFET for the region I_D = 0 to 1.5 mA for V_GS = -2 V.
g. Defining the result of part (b) as r_o , determine the resistance for V_GS = -1 V using Eq. (6.1) and compare wi th the results of part (d).
h. Repeat part (g) for V_GS = -2 V using the same equation, and compare the results with part (f).
i. Based on the results of parts (g) and (h), does Eq. (6.1) appear to be a valid approximation?

Transcribed Image Text:

A'p (mA) Locus of pinch-off values Ohmic Saturation Region Region | 8 VGs 0 V Ipss 6. 5 VGs =-1 V 4 3 VGS =-2 V VGs=-3 V Vas =-4 V = Vp 1 10 15 20 25 Vps (V) V, (for Ves =0 V) GS 2.