Consider a Si p n step junction with N A 10 17 cm 3 and N D 10 16 cm 3 , with recombination lifetimes p 0 1 s and n 0 01 s and carrier mobilities h 450 cm 2 V s and e 800 cm 2 V s at 300 K ...

To analyze the pn junction we need to calculate various parameters like depletion region width built ...

Consider a Si p-n step junction with N A = 10 17 cm -3 and N D

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Consider a Si p-n step junction with N_A = 10¹⁷ cm^-3 and N_D = 10¹⁶ cm^-3, with recombination lifetimes τ_p = 0.1 μ_s and τ_n = 0.01 μ_s and carrier mobilities μ_h = 450 cm²/V_s and μ_e = 800 cm²/V_s at 300 K.

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Fundamentals Of Solid State Engineering

ISBN: 9783319757070

4th Edition

Authors: Manijeh Razeghi

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Question Posted: Aug 25, 2021 03:04 AM

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Consider a Si p-n step junction with N A = 10 17 cm -3 and N D

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Fundamentals Of Solid State Engineering

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