Plot the diode equation for an ideal Si p n junction diode with an area 50 m 2 , an acceptor concentration N A 10 18 cm 3 , a donor concentration N D 10 18 cm 3, recombination lifetimes equal to n p 1 s , and diffusion coefficients equal to D n 35 cm 2 s 1 and D p 12 5 cm 2 s 1

Question: Plot the diode equation for an ideal Si p-n junction diode with an area 50 m 2 , an acceptor concentration N A = 10

Plot the diode equation for an ideal Si p-n junction diode with an area 50 μm², an acceptor concentration N_A = 10¹⁸ cm^-3, a donor concentration N_D = 10¹⁸ cm-3, recombination lifetimes equal to τ_n = τ_p = 1 μ_s, and diffusion coefficients equal to D_n = 35 cm².s^-1 and D_p = 12.5 cm².s^-1.

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The diode equation for an ideal Si pn junction diode can be written as I I0 expqVkT 1 where I is the ... View full answer

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