Derive expressions for concentrations of free carriers in a semiconductor doped with both, donor and acceptor impurities.

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Derive expressions for concentrations of free carriers in a semiconductor doped with both, donor and acceptor impurities. Determine the conductivity type and calculate the concentrations of carriers in silicon at T = 300 K, if it is doped with:

(a) N_A =1016 cm-3> > N_D.

(b) N_D = 1016 cm-3> > N_A.

Assume that all impurities are ionized and ni = 1.38 × 10¹⁰ cm^-3 at 300 K.

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Fundamentals Of Solid State Engineering

ISBN: 9783319757070

4th Edition

Authors: Manijeh Razeghi

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Question Posted: Jun 11, 2021 08:03 AM

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Derive expressions for concentrations of free carriers in a semiconductor doped with both, donor and acceptor impurities.

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Fundamentals Of Solid State Engineering

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