Consider an n type doped GaAs semiconductor at 300 K with an experimentally measured electron concentration of 3 10 17 cm 3 The n type dopant has an energy level such that E d E C E d 25 meV Assuming there is no acceptor, determine the proportion of ionized donors Determine the total concentration ...

Band gap of GaAs at 300k is 144ev Given E E 25mev 0025ev 144ev N ni ex ...

Consider an n-type doped GaAs semiconductor at 300 K with an experimentally measured electron concentration of 3

Question:

Consider an n-type doped GaAs semiconductor at 300 K with an experimentally measured electron concentration of 3 × 10¹⁷ cm^-3. The n-type dopant has an energy level such that ΔE_d = E_C = E_d = 25 meV. Assuming there is no acceptor, determine the proportion of ionized donors. Determine the total concentration of donors.