Consider a p type doped GaAs semiconductor at 300 K with an experimentally measured hole concentration of 1 5 1017 cm 3 The p type dopant has an energy level such that E a E a E V 125 meV Assuming there is no donor, determine the proportion of ionized acceptors Determine the total concentration of ...

Given Ea Ev AEa 125mev Now fraction of ionizat ...

Consider a p-type doped GaAs semiconductor at 300 K with an experimentally measured hole concentration of 1.5

Question:

Consider a p-type doped GaAs semiconductor at 300 K with an experimentally measured hole concentration of 1.5 × 1017 cm^-3. The p-type dopant has an energy level such that ΔE_a = E_a - E_V = 125 meV. Assuming there is no donor, determine the proportion of ionized acceptors. Determine the total concentration of acceptors.