Three different C2F6 flow rates (SCCM) were considered in an experiment to investigate the effect of flow rate on the uniformity (%) of the etch on a silicon wafer used in the manufacture of integrated circuits, resulting in the following data:

Compare and contrast the uniformity observations resulting from these three different flow rates.

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Flow rate 125 160 200 2.6 2.7 3.0 3.2 3.8 4.6 3.6 4.2 4.2 4.6 4.9 5.0 2.9 3.4 3.5 4.1 4.6 5.1