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0. (6 pts) I want to n-type dope silicon by diffusing arsenic vapor into it. If I heat a Si wafer up to 1100C, where

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0. (6 pts) I want to n-type dope silicon by diffusing arsenic vapor into it. If I heat a Si wafer up to 1100C, where the diffusion coefficient of As in Si is 2.01014cm2s1, and expose it to a vapor pressure of As such that the surface concentration of As in the Si is 51017cm3, what will be the 1/e penetration depth of the As into the wafer after 10h

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