1. (a) Calculate the total number of free electrons in the intrinsic Si bar (shown below) at 300C if the dimension of the Si bar is (4 cm x 2 cm x 1 cm). Consider bandgap of Si - 1.1 eV. Note: The density of states in the conduction band (N.) A B is also a function of temperature and is given by: Si T Nc() = 2.8 X 109 x 300 3/2 cm (1) Calculate the 'Free Electron Concentration (no)' at temperatures from 0C to 350C with an increment of 25C. That means, you need to calculate no values at 0C, 25C, 50C, 75C, 350C (total 15 values). Instead of doing these repetitive calculations by hand, you can use any software, such as MATLAB, MathCAD, Microsoft Excel, Python etc. Include a Table with two columns - Temperatures on column 1 and corresponding calculated no values on column 2. If you use MATLAB or any other programming software for your calculations, then add the codes in your homework submission. (6) Using the data of the above Table, plot the 'Free Electron Concentration (no) vs 'Temperature (T)'. Use a graphing software, such as MATLAB, MathCAD, Microsoft Excel etc. for plotting. Hand drawn plots are not accepted and will not receive any credit. Include the plot/graph in your HW submission along with any codes used for plotting. (d) Calculate the ratio of currents flowing through the bar at 225C and at 0C when a 10V DC supply is connected across terminals A and B. Assume current is only due to the flow of electrons. () Can you suggest an application or an electronic device made using intrinsic Si where the strong temperature dependent electronic property can be utilized