12. In the production of many microelectronic devices, continucus chemical rapor deposition (CVD) processes are used to deposit thin and excepionally uniform silicon dioxide films on silicon wafers. One CVD process involves the reaction between silane and oxygen at a very low pressure. SiH4(g)+O2(g)SiO2(g)+2H2(g) at 298K and 3.00 torr absolute. The reaction products emerge at 1375K and 3.00 torr absolute. Essentially all of the silane in the feed is consumed. (a) Taking basis of 1m3 of feed gas. calculate the moles of each component of the feed and product mixtures and the extent of reaction, (mol). (b) Calculate the standard beat of the silante uxidation reaction (kJ/mol). Then, taking the feed and product species at 298K(25C) as references, prepure an inlet-outlet enthalpy table and calculate and 6il in the component amounts (mol) and specific enthalpies (kJ/mol). (See Example 9.5-1.) Data (C+)siH4[s[k]j)(molK)]=0.01118+12.2105T5.54810kT2+6.841012T3(Cp)sioakk)(modK)]=0.04548+3.646105T1.009101/T2 The temperatures in the formalas for Cz are in kelvut. (c) Calculate the heat (kJ) that must be transterred to or from the reactor (state which it is). Then determine the required beas transfer rate (kW) required for a reactor feed of 27.5m2/h