15:59 %47 + HW3.docx - Salt okunur Salt Okunur - Bu dosyada yaplan deiiklikleri kaydedemezsiniz. Spring 2020 EE418 - HW3 1) We want to design a heterojunction InP/ InGaAsP/ InGaAs LED for 1.3 um emission with an area A = 0.01 mm' and an output optical power Pot - 10 mW. The maximum injected charge density in the active InGaAsP layer is n = 5 x 10 cm. The effective refractive index of the heterostructure is 3.5 and the refractive index of the encapsulation material is 1.5. Evaluate the thickness of the active region assuming the radiative lifetime is 3 ns and external quantum efficiency is 40%. (You can assume that the extraction is only affected by the reflection losses, therefore extraction efficiency can be assumed to be equal to (1- Reflectance). To simplify the calculations, you can assume that the photons are only hitting the boundaries at normal incidence) MIO 15:59 %47 + HW3.docx - Salt okunur Salt Okunur - Bu dosyada yaplan deiiklikleri kaydedemezsiniz. Spring 2020 EE418 - HW3 1) We want to design a heterojunction InP/ InGaAsP/ InGaAs LED for 1.3 um emission with an area A = 0.01 mm' and an output optical power Pot - 10 mW. The maximum injected charge density in the active InGaAsP layer is n = 5 x 10 cm. The effective refractive index of the heterostructure is 3.5 and the refractive index of the encapsulation material is 1.5. Evaluate the thickness of the active region assuming the radiative lifetime is 3 ns and external quantum efficiency is 40%. (You can assume that the extraction is only affected by the reflection losses, therefore extraction efficiency can be assumed to be equal to (1- Reflectance). To simplify the calculations, you can assume that the photons are only hitting the boundaries at normal incidence) MIO