Answered step by step
Verified Expert Solution
Link Copied!

Question

1 Approved Answer

2. Consider an NMOS transistor in 65nm process with W/L=205/130nm. In this process, the gate oxide thickness is 10.5108cm. The high-field mobility of electrons, n

image text in transcribed
2. Consider an NMOS transistor in 65nm process with W/L=205/130nm. In this process, the gate oxide thickness is 10.5108cm. The high-field mobility of electrons, n is assumed to be 80cm2/V, threshold voltage, Vtn=0.3V and ox=3.98.85x 1014F/cm. Plot Ids vs. Vds for Vgs=0.7V. Show the saturation values of Idsat and Vdsat. ks) (10Mar Answer =33.17,0.4

Step by Step Solution

There are 3 Steps involved in it

Step: 1

blur-text-image

Get Instant Access to Expert-Tailored Solutions

See step-by-step solutions with expert insights and AI powered tools for academic success

Step: 2

blur-text-image

Step: 3

blur-text-image

Ace Your Homework with AI

Get the answers you need in no time with our AI-driven, step-by-step assistance

Get Started

Recommended Textbook for

Rules In Database Systems Third International Workshop Rids 97 Sk Vde Sweden June 26 28 1997 Proceedings Lncs 1312

Authors: Andreas Geppert ,Mikael Berndtsson

1997th Edition

3540635165, 978-3540635161

More Books

Students also viewed these Databases questions