3. Given a p-type silicon bar at room temperature with NA = 1014/cm, & = 100 volts/cm in the +x direction, and cross-sectional area = 1 cm. Find the hole drift current in the +x direction, in amperes. 4. Given a GaAs bar having cross-sectional area = 1 cm, length = 5 cm. The semiconductor has n-type nondegenerate uniform doping with ND = 10 14 donor atoms/cm. What is the resistance of this bar along its length, in ohms, at room temperature?