3. (Quantum Effects in MOSFETS) (total 20 pts) (a) Calculate the ground-state energy level (E1) in Si n-channel double-gate (DG) MOSFET with 2-nm-thick body. (10 pts) (Note: Assuming that Si has (100) surface with m* -0.91me and m0.19me confined by infinite barriers) (6) Discuss that this (E1-Ec) in (a) can be a total Vy increase by proving that most of electrons are populated in Ei rather than E2 when Er-Ec=0.2 eV. (10 pts) (Hint: Use proper occupation probability function when Ep > Ec) 3. (Quantum Effects in MOSFETS) (total 20 pts) (a) Calculate the ground-state energy level (E1) in Si n-channel double-gate (DG) MOSFET with 2-nm-thick body. (10 pts) (Note: Assuming that Si has (100) surface with m* -0.91me and m0.19me confined by infinite barriers) (6) Discuss that this (E1-Ec) in (a) can be a total Vy increase by proving that most of electrons are populated in Ei rather than E2 when Er-Ec=0.2 eV. (10 pts) (Hint: Use proper occupation probability function when Ep > Ec)