6. In the following circuit, the NPN bipolar transistor is used in such a way that it operates in the saturation region. The circuit requires a collector current, IcsAr=30mA, when its output, Vout, is at SV. The transistor develops VSAT 0.8V and VCSAT-0.2V in saturation region when its base current, lasan is set 10 times higher compared to the base current when it is in active region, IBACT- Find Re. R and Rg that satisfy the proper transistor operation. Voo - 10V V = 8V le (mA) = 3mA 60 50 40 30 20 10 Re Q 0 Vceq = 0.2V le m - - Ro Rs VOUT 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA Is = 0.1mA VCEMAX = 10V VOE