7.a) With the help of a neat diagram explain different current components in an NPN bipolar junction transistor. b) With reference to bipolar junction transistors, define the following terms and explain. i) Emitter efficiency. ii) Base Transportation factor. iii) Large signal 8.a) Explain how ICO variations are compensated with the help of diode and thermistor in transistor biasing circuits? b) Design a collector to base bias circuit using silicon transistor to achieve a stability factor of 20, with the following specifications: VCC = 16V, VBE = 0.7V, VCEQ= 8V, ICQ= 4 mA & B=50. 9.a) Explain the basic requirements of transistor biasing. Verify these requirements in Emitter feedback bias circuit. b) An NPN Silicon transistor with B-50 is used in a common emitter circuit with VCC-10V, RC=2K. The bias is obtained by connecting a 100K resistance from collector to base. Find i) Q-Point ii) Stability factor, S 10.a) Explain the construction & operation of an P-channel enhancement and depletion MOSFET with the help of static drain characteristics and transfer characteristics. b) Explain why field effect transistor is called as unipolar and voltage controlled device