(a) Calculate the density of states (Nc,Nv) in CB and VB in Si at 300K (in the unit of cm3). (b) Calculate the density of states (Nc,Nv) in CB and VB in Ge at 300K (in the unit of cm3 ). (c) Calculate the intrinsic carrier concentration (ni) in Si at 300K (in the unit of cm3 ). (d) Calculate the intrinsic carrier concentration (ni) in Ge at 300K (in the unit of cm3 ) (e) Calculate the electron and hole concentrations (n,p) in intrinsic Si at 300K (in the unit of cm3 ). (f) Calculate the electron and hole concentrations (n,p) in intrinsic Ge at 300K (in the unit of3 ). (g) Calculate the conductivity (intrinsic conductivity) of intrinsic Si at 300K (in the unit of 1cm1 ). (h) Calculate the conductivity (intrinsic conductivity) of intrinsic Ge at 300K (in the unit of 1cm1 ). (i) Calculate the resistivity (intrinsic resistivity) of intrinsic Si at 300K (in the unit of cm ). (j) Calculate the resistivity (intrinsic resistivity) of intrinsic Ge at 300K (in the unit of cm ) (f) If the Si is n-type doped with 21017cm3As atoms, determine the relative position of the Fermi energy with respect to the VB edge (i.g., how far it is located from the edge of VB?) (g) If the Ge is n-type doped with 21017cm3 As atoms, determine the relative position of the Fermi energy with respect to the VB edge (i.g., how far it is located from the edge of VB?)