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A N-channel silicon (EG-1.1 eV) MOSFET was fabricated using N Polysilicon gate and the threshold voltage was found to be 1 V. Now, if

A N-channel silicon (EG-1.1 eV) MOSFET was fabricated using N Polysilicon gate and the threshold voltage was found to be 1 V. Now, if the gate is changed to P+ Polysilicon, other things remaining same, the new threshold voltage should be O 2.3 V O 2.1 V 02V 0 2.2 V

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