Question
A N-channel silicon (EG-1.1 eV) MOSFET was fabricated using N Polysilicon gate and the threshold voltage was found to be 1 V. Now, if
A N-channel silicon (EG-1.1 eV) MOSFET was fabricated using N Polysilicon gate and the threshold voltage was found to be 1 V. Now, if the gate is changed to P+ Polysilicon, other things remaining same, the new threshold voltage should be O 2.3 V O 2.1 V 02V 0 2.2 V
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Analysis and Design of Analog Integrated Circuits
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
5th edition
1111827052, 1285401107, 9781285401102 , 978-0470245996
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