A Si wafer (polished on both sides) is subjected to wet oxidation at a temperature of 1050C so that a 0.3um thick oxide layer is formed on both sides. The oxide on the one side is then etched away and the wafer is subjected to another wet oxidation step at 1050C until the etched side is re-oxidized to an oxide thickness of 0.4um. (a) Find the total oxidation time and explain; (b) Find the total oxide thickness on the non-etched side and explain; (c) draw the original surfaces (before the first oxidation step) and the location of the oxide-air and oxide-Si interfaces with respect to the original surface for each wafer side. Calculate and indicate on your drawing all relevant distances. A Si wafer (polished on both sides) is subjected to wet oxidation at a temperature of 1050C so that a 0.3um thick oxide layer is formed on both sides. The oxide on the one side is then etched away and the wafer is subjected to another wet oxidation step at 1050C until the etched side is re-oxidized to an oxide thickness of 0.4um. (a) Find the total oxidation time and explain; (b) Find the total oxide thickness on the non-etched side and explain; (c) draw the original surfaces (before the first oxidation step) and the location of the oxide-air and oxide-Si interfaces with respect to the original surface for each wafer side. Calculate and indicate on your drawing all relevant distances