A silicon photoconductor (with electron mobility = 1450 cm?/V.s and hole mobility = 450 cm?/V.s) is operated at an electric field of 2x10 V/cm with a corresponding photocurrent density of 2.96 A/cm2. The crossectional area through which the generated carriers travel is 1 mm. The photoconductor is designed in a way that incident photons enter the device through a window, and the window is located somewhere close to one of the contacts such that electrons travel a distance of 10 mm, which is much larger than the distance traveled by the holes, which in turn makes the electron and hole transit times equal to each other. If the photoconductor's gain is 10, and its responsivity at 0.62 uum is 2.5 A/W, find the width of the window through which the photons enter into the device! A silicon photoconductor (with electron mobility = 1450 cm?/V.s and hole mobility = 450 cm?/V.s) is operated at an electric field of 2x10 V/cm with a corresponding photocurrent density of 2.96 A/cm2. The crossectional area through which the generated carriers travel is 1 mm. The photoconductor is designed in a way that incident photons enter the device through a window, and the window is located somewhere close to one of the contacts such that electrons travel a distance of 10 mm, which is much larger than the distance traveled by the holes, which in turn makes the electron and hole transit times equal to each other. If the photoconductor's gain is 10, and its responsivity at 0.62 uum is 2.5 A/W, find the width of the window through which the photons enter into the device