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A (111) silicon wafer is covered by an SiO2 film 0.1 um thick. Boltzmann constant 8.62 x 10-5eV/K (a) What is the total oxide thickness (use the chart below) after 60 minutes by oxidation in H20 at 1000C? (b) What is the time required by increasing the thickness of 0.5 um by a dry O2 oxidation at 1200 C following (a). (10 marks) Table: Rate constants describing (111) silicon oxidation kinetics at 1 atm total pressure. Ambient B B/A Dry 02 C1 = 7.72 x 102umhr-1 = C2 = 6.23 x 106umhr-1 E1 = 1.23 eV E2 = 2.0 eV = Wet O2 C1 = 2.14 x 102umhr-1 C2 == 8.95 x 10?umhr-1 E1 = 0.71 eV = E1 = = 2.05 eV H2O C1 = 3.86 x 102 umhr-1 C2 = 1.63 x 108 um?hr-1 E1 = = 0.78 eV E1 = 2.05 eV