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Collige of Engineering Technology and Archisecture UNIVERSITY OF HARTFORD Department of Electrical Computer Enginering ECT 232 N2, 13) very high voltage gain C) very high

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Collige of Engineering Technology and Archisecture UNIVERSITY OF HARTFORD Department of Electrical Computer Enginering ECT 232 N2, 13) very high voltage gain C) very high output impedance D) very low output impedance 24) For a Successive Volts, determine Voles, detenmine te Approximation A to D converor the Vref is 10V and the analog input voltage is 7.28 the 8 bit frequency is 10eary eutpt resulting from the conversion, the conversion time if the clock percentage of error in the resulkting conversion 25) Dise or tape memory devices are known as: A) clectrical media. B) mechanical media. C) physical media D) magnetic media. 26) Static memory is memory A) that will maintain storage even if power is removed. B) whose data can never be altered. C) that must be refreshed periodically or it will lose storage. D) that maintains storage as long as power is applied 27) Read-only memory is memory A) that has unlimited storage capacity B) whose data can never be alterod by the user. C) that must be refreshed periodically or it will lose storage. D) that maintains storage as long as power is applied. 28) Dynamic memory is memory A) that will maintain storage even if power is removed. B) whose data can never be altered. C) that must be refreshed periodically or it will lose storage. D) that maintains storage as long as power is applied. Page 4

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