Consider a HFET whose gate width is 0.6mm and the gate length is 0.3um. The source and drain resistance per unit width are equal, each given by 1.2ohm*mm. The HFET has gate capacitance of 3*10^-7F/cm^2 and threshold voltage of 0.3V. The electron mobility in the channel is 4000cm^2/V*s It is biased at Vgs=0.5V and Vds =3V. We shall assume that the parasitic capacitance for the device is 1/10 of the intrinsic device capacitance. Calculate the total gate capacitance (Cg) and the source (Rs) and the drain (Rd) resistance.