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In a particular IC design in which the standard channel length is 2um, an NMOS device with W/L of 5 operating at 100A is

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In a particular IC design in which the standard channel length is 2um, an NMOS device with W/L of 5 operating at 100A is found to have an output resistance of 0.5MO, about 1/4 of that needed. What dimensional change can be made to solve the problem? a) What is the new device length? b) The new device width? c)The new W/L ratio? d) What is VA for the standard device in this IC? The new device?

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