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In a P-type Si sample the hole concentration is2.25x1015/cm3. The intrinsic carrier Concentration is 1.5x1010/cm3 ,what is the electron concentration?.B-At T = 300 K,
In a P-type Si sample the hole concentration is2.25x1015/cm3. The intrinsic carrier Concentration is 1.5x1010/cm3 ,what is the electron concentration?.B-At T = 300 K, the %3D hole mobility of a semiconductor up=500 cm2/V-s and kTq=26mV. The hole diffusion constant Dp in cm2/s is
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Physics
Authors: Alan Giambattista, Betty Richardson, Robert Richardson
2nd edition
77339681, 978-0077339685
