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Q3 (15 points): A particule go junction s 7 = 300 K is doped with impurity concentration of N. = 1.1 x 1014 car and
Q3 (15 points): A particule go junction s 7 = 300 K is doped with impurity concentration of N. = 1.1 x 1014 car and N. = 2 x 1010 am. The thermal equilibrium hole concentration in p. - 1.1 X 1014 em . Comnader the revinquiry of the aside in 40 0-em and of the paide is 20 0-em. Aname complete soboization and let the thermal voltage V, = 25 mV. the electron charge 1.6 X 10 17 and the electric perminivity of the semiconductors, = 13.16, with . = 8.85 x 107 Frem Determine the intrinsic carrier concentration Determine the depletion region in the n- .side, Xn Determine the depletion region width Determine the hole mobility in the n- .region
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