Question: Sedra Ed . 8 , Prob 1 6 . 1 ) Consider MOS transistors fabricated in a 6 5 nm process for which nCox =

Sedra Ed.8, Prob 16.1) Consider MOS transistors fabricated in a 65 nm process for which
nCox =540 A/V2, pCox =100 A/V2, Vtn =Vtp =0.35 V, and VDD =1 V.
(a) Find Ron of an NMOS transistor with W/L =1.5.
(b) Find Ron of a PMOS transistor with W/L =1.5.
(c) If Ron of the PMOS device is to be equal to that of the NMOS device in (a), what must
(W/L)p be?

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