The energy band diagram of a uniformly doped Si sample maintained at room temperature is shown. Where L = 100um, Ec - E = Eg/2, E - Ev = Eg/2, Ec - FN = Eg/4, Fp- Ev = Eg/4, band bending is 0.7eV. Take mobility of electrons and holes as 1400 cm2/V.s and 450 cm2/V.s respectively. E, OeV. a) Is semiconductor in equilibrium? Justify your answer. [3] b) Calculate and sketch the electron and hole concentrations (n and p) inside the sample as a function of position. [3] c) Calculate and sketch the electron and hole diffusion current densities (JN Idiff) and (JP |diff) inside the sample as a function of position. [3] d) Calculate and sketch the electron and hole drift current densities (JN Idrift) and (JP Idrift) inside the sample as a function of position. [3] The energy band diagram of a uniformly doped Si sample maintained at room temperature is shown. Where L = 100um, Ec - E = Eg/2, E - Ev = Eg/2, Ec - FN = Eg/4, Fp- Ev = Eg/4, band bending is 0.7eV. Take mobility of electrons and holes as 1400 cm2/V.s and 450 cm2/V.s respectively. E, OeV. a) Is semiconductor in equilibrium? Justify your answer. [3] b) Calculate and sketch the electron and hole concentrations (n and p) inside the sample as a function of position. [3] c) Calculate and sketch the electron and hole diffusion current densities (JN Idiff) and (JP |diff) inside the sample as a function of position. [3] d) Calculate and sketch the electron and hole drift current densities (JN Idrift) and (JP Idrift) inside the sample as a function of position. [3]