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UUS Question 23 IP Is there a phenomenon that can allow an implanted ion to travel far into the wafer without colliding with Si lattice
UUS Question 23 IP Is there a phenomenon that can allow an implanted ion to travel far into the wafer without colliding with Si lattice atoms? Yes, as determined by the ionic dispersion constant for that particular ion species Yes, channeling Yes, straggling No, the random lattice factor prevents such behavior Yes, tunneling
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