A GaAs p-n junction has a \(100 \mu \mathrm{m} \times 100 \mathrm{~m}\) cross section and a width of the depletion layer \(W=440 \mathrm{~nm}\). Consider the junction in thermal equilibrium without bias at \(300 \mathrm{~K}\). Find the junction capacitance.

\(\varepsilon_{s}=13.18 \varepsilon_{0}\) for GaAs and \(\varepsilon_{0}=8.854 \times 10^{-12} \mathrm{~F} / \mathrm{m}\).