Consider the PMOS circuit shown in Figure 3.30. The circuit is to be redesigned such that \(I_{D Q}=100 \mu \mathrm{A}\) and the Q-point is in the center of the saturation region of the load line. Assume \(R_{1}+R_{2}=500 \mathrm{k} \Omega\) and assume the same transistor parameters as given in Exercise Ex 3.6.

Data From Exercise 3.6:-

Transcribed Image Text:

Ex 3.6: Consider the circuit shown in Figure 3.30. The nominal transistor parameters are VTP = -0.30 V and Kp = 120 A/V. (a) Calculate VSG, ID, and VSD. (b) Determine the variation in Ip if the threshold voltage varies by == 5 percent. (Ans. (a) VSG = 1.631 V, ID = 0.2126 mA, VSD = 3.295 V; (b) 0.2091 ID 0.2160 mA)