In a power MOS transistor, the maximum applied gate voltage is (24 mathrm{~V}). If a safety factor
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In a power MOS transistor, the maximum applied gate voltage is \(24 \mathrm{~V}\). If a safety factor of three is specified, determine the minimum thickness necessary for the silicon dioxide gate insulator.
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Related Book For
Microelectronics Circuit Analysis And Design
ISBN: 9780071289474
4th Edition
Authors: Donald A. Neamen
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