(a) A silicon dioxide gate insulator of an MOS transistor has a thickness of (t_{mathrm{ox}}=120 ). (i)...

(a) A silicon dioxide gate insulator of an MOS transistor has a thickness of \(t_{\mathrm{ox}}=120 Å\). (i) Calculate the ideal oxide breakdown voltage. (ii) If a safety factor of three is required, determine the maximum safe gate voltage that may be applied.

(b) Repeat part (a) for an oxide thickness of \(t_{0 x}=200 Å\).