The circuit shown in Figure 4.1 has parameters (V_{D D}=2.5 mathrm{~V}) and (R_{D}=10 mathrm{k} Omega). The transistor

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The circuit shown in Figure 4.1 has parameters \(V_{D D}=2.5 \mathrm{~V}\) and \(R_{D}=10 \mathrm{k} \Omega\). The transistor is biased at \(I_{D Q}=0.12 \mathrm{~mA}\). The transistor parameters are \(V_{T N}=0.3 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0\).

(a) Design the \(W / L\) ratio of the transistor such that the small-signal voltage gain is \(A_{v}=-3.8\).

(b) Repeat part (a) for \(A_{v}=-5.0\).

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