The reverse-saturation current of a silicon pn junction diode at (T=300 mathrm{~K}) is (I_{S}=10^{-12} mathrm{~A}). Determine the
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The reverse-saturation current of a silicon pn junction diode at \(T=300 \mathrm{~K}\) is \(I_{S}=10^{-12} \mathrm{~A}\). Determine the temperature range over which \(I_{S}\) varies from \(0.5 \times 10^{-12} \mathrm{~A}\) to \(50 \times 10^{-12} \mathrm{~A}\).
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Related Book For
Microelectronics Circuit Analysis And Design
ISBN: 9780071289474
4th Edition
Authors: Donald A. Neamen
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