The direct band gap in silicon is 3.4 eV. What is the maximum possible collection efficiency (for

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The direct band gap in silicon is 3.4 eV. What is the maximum possible collection efficiency (for incident thermal radiation at 6000 K) for excitations over this gap?

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The Physics of Energy

ISBN: 978-1107016651

1st edition

Authors: Robert L. Jaffe, Washington Taylor

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