Design a voltage-divider bias network using a depletion-type MOSFET with IDSS = 10 mA and VP =

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Design a voltage-divider bias network using a depletion-type MOSFET with IDSS = 10 mA and VP = -4 V to have a Q-point at IDQ = 2.5 mA using a supply of 24 V. In addition, set VG = 4 V and use RD = 2.5Rs with R1 = 22 MΩ. Use standard values.

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Electronic Devices and Circuit Theory

ISBN: 978-0135026496

10th edition

Authors: Robert L. Boylestad, Louis Nashelsky

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Question Posted: Apr 30, 2016 11:45 AM

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Design a voltage-divider bias network using a depletion-type MOSFET with IDSS = 10 mA and VP =

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2 V V GS V G V S and V S V G V GS 4 V 2 ...View the full answer

Electronic Devices and Circuit Theory

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