1) Briefly explain the fabrication step for Ti-sallicide (self-aligned silicidation) sing cross-section. Start from the state below. < Gate oxide Gate polysilicon Field oxide 2) Calculate how many % of the contact resistance from the source/drain junction can be reduced through the silicide process. Source/drain junction acrea is 1m x2m, contact window is 0. 2m x 0. supposed that Specific contact resistance is 2 10-72 cm2 at metal (or silicide)/ silicon contact, and 0.2 10-82 cm2 at metal/ metal (or silicide). Problem 24 The two samples below has a buried layer which doped with phosphorous and antimony. And part of the sample is covered with nitride/oxide stack. With those sample do thermal oxidation, the buried layer diffuses due to high temperature. Draw and briefly explain how the buried layer region changes by diffusion. Hint: phosphorus diffused to interstitial (or interstitialcy mechanism), and antimony diffused to vacancy mechanism. Nitride layer Nitride layer Buried phosphorus layer Buried Antimony layer Silicon substrate Silicon substrate