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9. A silicon pn junction in thermal equilibrium at T = 300 K is doped such that EF - Eri = 0.365 eV in
9. A silicon pn junction in thermal equilibrium at T = 300 K is doped such that EF - Eri = 0.365 eV in the n region and Eri - EF 0.330 eV in the p region. (a) Sketch the energy-band diagram for the pn junction. (b) Find the impurity doping concentration in each region. (c) Determine V bi.
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Authors: Kip S. Thorne, Roger D. Blandford
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0691159025, 978-0691159027
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