A p-type (boron) diffusion is performed as follows: Predep: 30 minutes, 900C, solid solubility (assume 8-profile after this step) Drive in: 60 minutes, 1000C a. What is the deposited Q? b. If the substrate is doped 1105 cm3 phosphorus, what is x;? c. What is roughly the sheet resistance of the diffused layer? (ignore conductivity due to substrate doping, mobility 500 cm/V.sec) Note: for diffusion coefficient D, please give the values both by graph (D vs. 1000/T) and by equation (D=De^(-E/kT)), but use the D by equation for the calculation of dose and junction depth.