Electronic properties are imparted to crystalline silicon by diffusing an elemental impurity called a dopant into this material at high temperature. At 1316 K, the

Electronic properties are imparted to crystalline silicon by diffusing an elemental impurity called a €œdopant€ into this material at high temperature. At 1316 K, the diffusion coefficient of one particular dopant in silicon is 1.0 × 10^€“13cm²/s; at 1408 K, the diffusion coefficient has increased to 1.0 × 10^€“12cm²/s. Based on Table 24.7, what is a likely candidate for the dopant material?

Table 24.7 Diffusion parameters common substitutional dopants in polycrystalline silicon, using data obtained from Ghandhi3 Do (cm/s) Q (kJ/gmole) Dopant Al 2.61 0.658 319.1 As 348.1 356.2 312.6 373.5 B, P Ga 11.1 0.494 15.7 In