Consider a silicon pin junction composed of a p-type region, intrinsic region and n-type region. The p- and n-type regions are doped with acceptor density, N_A = 1 \times 10^{16} cm^{-3}NA=1×1016cm−3 and donor density, N_D = 2 \times 10^{15} cm^{-3}ND=2×1015cm−3, respectively. The intrinsic region, which is sandwiched between the p- and n-type regions, is undoped. Suppose the intrinsic region is 1 \mu m1μm thick. Find the electric field inside the depletion regions and intrinsic region in this pin junction and compare that with the electric field within the depletion region of a pn junction with the same doping densities.