The growth of a germanium epitaxial film as an interlayer between a gallium arsenide layer and a silicon layer has received attention in the microelectronics industry. Epitaxial germanium is also an important material in the fabrication of tandem solar cells. The growth of germanium films can be accomplished by CVD. The gas-phase dissociation of GeCl4 is given by GeCl4 (g) = GeCl2(g) + Cl2 The rate of deposition of Ge when He is weakly adsorbed is given by kPGeci PH, Piz Tep = (Pelz + K KpPgecizi Pci Propose a catalytic reaction mechanism and drive all equations related