A particular NMOS device has parameters (V_{T N}=0.6 mathrm{~V}, L=0.8 mu mathrm{m}), (t_{mathrm{ox}}=200 ), and (mu_{n}=600 mathrm{~cm}^{2}

A particular NMOS device has parameters \(V_{T N}=0.6 \mathrm{~V}, L=0.8 \mu \mathrm{m}\), \(t_{\mathrm{ox}}=200 Å\), and \(\mu_{n}=600 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}\). A drain current of \(I_{D}=1.2 \mathrm{~mA}\) is required when the device is biased in the saturation region at \(V_{G S}=3 \mathrm{~V}\). Determine the required channel width of the device.