Consider the class-AB output stage in Figure P8.48. The parameters are: \(V^{+}=12 \mathrm{~V}, V^{-}=-12 \mathrm{~V}, R_{L}=100 \Omega\), and \(I_{\text {Bias }}=5 \mathrm{~mA}\). The transistor and diode parameters are \(I_{S}=10^{-13} \mathrm{~A}\). The transistor current gains are \(\beta_{n}=\) 100 and \(\beta_{p}=20\) for the npn and pnp devices, respectively.

(a) For \(v_{O}=0\), determine \(V_{B B}\), and the quiescent collector current and base-emitter voltage for each transistor.

(b) Repeat part (a) for \(v_{O}=10 \mathrm{~V}\). What is the power delivered to the load and what is the power dissipated in each transistor?

Transcribed Image Text:

Bias D VBB D V+ 23 RL Figure P8.48 V