Consider the NMOS inverter with saturated load in Figure 16.5(a). Let (V_{D D}=3 mathrm{~V}). (a) Design the

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Consider the NMOS inverter with saturated load in Figure 16.5(a). Let $V_{D D}=3 \mathrm{~V}$.

(a) Design the circuit such that the power dissipation in the circuit is $400 \mu \mathrm{W}$ and the output voltage is $0.10 \mathrm{~V}$ when the input voltage is a logic 1.

(b) Determine the transition point of the driver transistor.

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Microelectronics Circuit Analysis And Design

ISBN: 9780071289474

4th Edition

Authors: Donald A. Neamen

Question Posted: May 08, 2024 03:01 PM

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Consider the NMOS inverter with saturated load in Figure 16.5(a). Let (V_{D D}=3 mathrm{~V}). (a) Design the

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VDD iDL ip + Load: VDSL VTNL, KL + VGSL iDD + UDSD Driver: VIND, KD + VGSD (a) = - VDS (sat) VGS VTN Transition point VDD-VTNL VDD "DS (b) Figure 16.5 (a) NMOS inverter with saturated load and (b) driver transistor characteristics and load curve

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Microelectronics Circuit Analysis And Design

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