The bias current (I_{Q}) is (25 mu mathrm{A}) in each circuit in Figure P11.84. The BJT parameters

Question:

The bias current $I_{Q}$ is $25 \mu \mathrm{A}$ in each circuit in Figure P11.84. The BJT parameters are $\beta=100$ and $V_{A}=50 \mathrm{~V}$, and the MOSFET parameters are $V_{T N}=0.8 \mathrm{~V}, K_{n}=0.25 \mathrm{~mA} / \mathrm{V}^{2}$, and $\lambda=0.02 \mathrm{~V}^{-1}$. Assume the two amplifying transistors $M_{1}$ and $Q_{1}$ are biased in the saturation region and forward-active region, respectively. Determine the small-signal voltage gain $A_{v}=v_{o} / v_{i}$ and the output resistance $R_{o}$ for each circuit.

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