(a) Calculate the built in potential, depletion layer depths, and maximum field in a plane abrupt pn junction in silicon with doping densities N A 8 10 15 atoms cm 3 and N D 10 17 atoms cm 3 Assume a reverse bias of 5 V (b) Repeat (a) for zero external bias and 0 3 V forward bias

Question: (a) Calculate the built-in potential, depletion layer depths, and maximum field in a plane-abrupt pn junction in silicon with doping densities N A = 8

(a) Calculate the built-in potential, depletion layer depths, and maximum field in a plane-abrupt pn junction in silicon with doping densities N_A = 8 × 10¹⁵ atoms/cm³ and N_D = 10¹⁷ atoms/cm³. Assume a reverse bias of 5 V.
(b) Repeat (a) for zero external bias and 0.3 V forward bias.

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