(a) Calculate the built-in potential, depletion layer depths, and maximum field in a plane-abrupt pn junction in...
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(a) Calculate the built-in potential, depletion layer depths, and maximum field in a plane-abrupt pn junction in silicon with doping densities NA = 8 × 1015 atoms/cm3 and ND = 1017 atoms/cm3. Assume a reverse bias of 5 V.
(b) Repeat (a) for zero external bias and 0.3 V forward bias.
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Related Book For
Analysis and Design of Analog Integrated Circuits
ISBN: 978-0470245996
5th edition
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
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